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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1

China Yingxinyuan Int'l(Group) Ltd. certification
China Yingxinyuan Int'l(Group) Ltd. certification
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Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1

Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1
Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1

Large Image :  Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1

Product Details:
Place of Origin: N/S
Brand Name: Texas Instruments
Certification: /
Model Number: TCAN1042GDQ1
Payment & Shipping Terms:
Minimum Order Quantity: 1PCS
Price: Negotiation
Delivery Time: 2-7 work days
Payment Terms: T/T
Supply Ability: 9999999+PCS
Detailed Product Description
Type: IGBT Module Package: IGBT
Warranty: 90days Shipping By: DHL
Lead Time: STOCK
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Insulated Gate Bipolar Transistor Power Module

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IGBT Insulated Gate Bipolar Transistor

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TCAN1042GDQ1

IGBT Power Module Texas Instruments/TI TCAN1042GDQ1

Protocols CAN, CAN FD
Number of channels (#) 1
Supply voltage (V) 4.5 to 5.5
Bus fault voltage (V) -58 to 58
Signaling rate (Max) (Mbps) 5
TI functional safety category Functional Safety-Capable
Rating Automotive
Operating temperature range (C) -55 to 125
Low power mode Standby
Common mode voltage (V) -30 to 30
Isolated No

 

Features for the TCAN1042G-Q1

  • AEC-Q100 (grade 1): Qualified for automotive applications
  • Meets the ISO 11898-2:2016 and ISO 11898-5:2007 physical layer standards
  • Functional Safety-Capable
  • ’Turbo’ CAN:
    • All devices support classic CAN and 2 Mbps CAN FD (flexible data rate) and "G" options support 5 Mbps
    • Short and symmetrical propagation delay times and fast loop times for enhanced timing margin
    • Higher data rates in loaded CAN networks
  • EMC performance: supports SAE J2962-2 and IEC 62228-3 (up to 500 kbps) without common mode choke
  • I/O Voltage range supports 3.3 V and 5 V MCUs
  • Ideal passive behavior when unpowered
    • Bus and logic terminals are high impedance (no load)
    • Power up/down with glitch free operation on bus and RXD output
  • Protection features
    • IEC ESD protection up to ±15 kV
    • Bus Fault protection: ±58 V (non-H variants) and ±70 V (H variants)
    • Undervoltage protection on VCC and VIO (V variants only) supply terminals
    • Driver dominant time out (TXD DTO) - Data rates down to 10 kbps
    • Thermal shutdown protection (TSD)
  • Receiver common mode input voltage: ±30 V
  • Typical loop delay: 110 ns
  • Junction temperatures from –55°C to 150°C
  • Available in SOIC(8) package and leadless VSON (8) package (3.0 mm x 3.0 mm) with improved automated optical inspection (AOI) capability

Description for the TCAN1042G-Q1

This CAN transceiver family meets the ISO11898-2 (2016) High Speed CAN (Controller Area Network) physical layer standard. All devices are designed for use in CAN FD networks up to 2 Mbps (megabits per second). Devices with part numbers that include the "G" suffix are designed for data rates up to 5 Mbps, and versions with the "V" have a secondary power supply input for I/O level shifting the input pin thresholds and RXD output level. This family has a low power standby mode with remote wake request feature. Additionally, all devices include many protection features to enhance device and network robustness.

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