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ROSH Approved Power Management ICs UCC27211DRMT Texas Instruments PMIC

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ROSH Approved Power Management ICs UCC27211DRMT Texas Instruments PMIC

ROSH Approved Power Management ICs UCC27211DRMT Texas Instruments PMIC
ROSH Approved Power Management ICs UCC27211DRMT Texas Instruments PMIC ROSH Approved Power Management ICs UCC27211DRMT Texas Instruments PMIC ROSH Approved Power Management ICs UCC27211DRMT Texas Instruments PMIC ROSH Approved Power Management ICs UCC27211DRMT Texas Instruments PMIC ROSH Approved Power Management ICs UCC27211DRMT Texas Instruments PMIC

Large Image :  ROSH Approved Power Management ICs UCC27211DRMT Texas Instruments PMIC

Product Details:
Place of Origin: N/S
Brand Name: Texas Instruments
Certification: /
Model Number: UCC27211DRMT
Payment & Shipping Terms:
Minimum Order Quantity: 1PCS
Price: Negotiation
Delivery Time: 2-7 work days
Payment Terms: T/T
Supply Ability: 9999999+PCS
Detailed Product Description
Datesheet: Contact For Details Lead Free Status: Lead FreePB,Lead Free/RoHS
Rosh: Yes Shipping Ways: DHL FEDEX UPS EMS TNT,DHL/FEDEX/EMS/CHINA POST OFFICE AND SO ON,DHL\UPS\Fedex\EMS\HK Post
D/c: Originals Type: Power Management ICs
High Light:

UCC27211DRMT Power Management ICs

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ROSH Power Management ICs

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Texas Instruments PMIC

Power Management ICs Texas Instruments/TI UCC27211DRMT

ECAD Module PCB Symbol,Footprint & 3D Model
Halogen Free Compliant
Estimated EOL Date 2031
Alternative Parts
(Cross-Reference)
NCP5106BDR2G; NCP5106ADR2G; MAX5063AASA+T; MAX5063CASA+;
ECCN EAR99
Introduction Date October 01, 2011
Family Name UCC27211
Supply and Demand Status Limited
Fake Threat In the Open Market 40 pct.
Popularity Medium
Win Source Part Number 798690-UCC27211DRMT
Mounting SMD
Rise / Fall Time (Typ) 7.2ns, 5.5ns
Operating Temperature Range -40°C ~ 140°C (TJ)
Package 8-VDFN Exposed Pad
Logic Voltage - VIL, VIH 1.3V, 2.7V
Operating Supply Voltage 8 V ~ 17 V
Manufacturer Package 8-VSON (4x4)
High Side Voltage - Max (Bootstrap) 120V
Current - Peak Output (Source, Sink) 4A, 4A
Channel Type Independent
Packaging Reel package
Manufacturer Texas Instruments
Categories Integrated Circuits (ICs)
Gate Type N-Channel MOSFET
Number of Drivers 2
Driven Configuration Half-Bridge

 

Features for the UCC27211

  • Drives Two N-Channel MOSFETs in High-Side
    and Low-Side Configuration With Independent
    Inputs
  • Maximum Boot Voltage 120-V DC
  • 4-A Sink, 4-A Source Output Currents
  • 0.9-Ω Pullup and Pulldown Resistance
  • Input Pins Can Tolerate –10 V to 20 V and Are
    Independent of Supply Voltage Range
  • TTL or Pseudo-CMOS Compatible Input Versions
  • 8-V to 17-V VDD Operating Range, (20-V Absolute
    Maximum)
  • 7.2-ns Rise and 5.5-ns Fall Time With 1000-pF
    Load
  • Fast Propagation Delay Times (18 ns Typical)
  • 2-ns Delay Matching
  • Symmetrical Undervoltage Lockout for High-Side
    and Low-Side Driver
  • All Industry Standard Packages Available (SOIC-8,
    PowerPAD™ SOIC-8, 4-mm × 4-mm SON-8
    and 4-mm × 4-mm SON-10)
  • Specified from –40 to 140 °C

Description for the UCC27211

The UCC27210 and UCC27211 drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers, but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4-A source and 4-A sink, and pull-up and pull-down resistance have been reduced to 0.9 Ω, thereby allowing for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure is now able to directly handle –10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a maximum rating of 20-V.

The switching node (HS pin) of the UCC2721x can handle –18 V maximum which allows the high-side channel to be protected from inherent negative voltages caused parasitic inductance and stray capacitance. The UCC27210 (Pseudo-CMOS inputs) and UCC27211 (TTL inputs) have increased hysteresis allowing for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 2 ns between the turnon and turnoff of each other.

An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers providing symmetric turnon and turnoff behavior and forcing the outputs low if the drive voltage is below the specified threshold.

Both devices are offered in 8-pin SOIC (D), PowerPAD SOIC-8 (DDA), 4-mm × 4-mm SON-8 (DRM) and SON-10 (DPR) packages.

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