DMN1019UFDE-7
manufacturer:
Diodes Incorporated
Description:
MOSFET N CH 12V 11A U-DFN2020-6E
Category:
Semiconductors
Specifications
Product Category ::
MOSFET
Vgs (Max) ::
±8V
Current - Continuous Drain (Id) @ 25°C ::
11A (Ta)
@ Qty ::
0
FET Type ::
N-Channel
Mounting Type ::
Surface Mount
Gate Charge (Qg) (Max) @ Vgs ::
50.6nC @ 8V
Manufacturer ::
Diodes Incorporated
Minimum Quantity ::
3000
Drive Voltage (Max Rds On, Min Rds On) ::
1.2V, 4.5V
Factory Stock ::
0
Operating Temperature ::
-55°C ~ 150°C (TJ)
FET Feature ::
-
Series ::
-
Input Capacitance (Ciss) (Max) @ Vds ::
2425pF @ 10V
Supplier Device Package ::
U-DFN2020-6 (Type E)
Part Status ::
Active
Packaging ::
Tape & Reel (TR)
Rds On (Max) @ Id, Vgs ::
10 MOhm @ 9.7A, 4.5V
Power Dissipation (Max) ::
690mW (Ta)
Package / Case ::
6-UDFN Exposed Pad
Technology ::
MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id ::
800mV @ 250µA
Drain To Source Voltage (Vdss) ::
12V
Introduction
The DMN1019UFDE-7,from Diodes Incorporated,is MOSFET.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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