STGYA120M65DF2
manufacturer:
STMicroelectronics
Description:
IGBT Transistors Trench gate field-stop IGBT, M series 650 V, 120 A low loss
Category:
Semiconductors
Specifications
Gate-Emitter Leakage Current ::
+/- 250 UA
Product Category ::
IGBT Transistors
Mounting Style ::
Through Hole
Continuous Collector Current At 25 C ::
160 A
Pd - Power Dissipation ::
625 W
Collector- Emitter Voltage VCEO Max ::
650 V
Package / Case ::
MAX-247-3
Maximum Operating Temperature ::
+ 175 C
Maximum Gate Emitter Voltage ::
+/- 20 V
Configuration ::
Single
Collector-Emitter Saturation Voltage ::
1.65 V
Manufacturer ::
STMicroelectronics
Introduction
The STGYA120M65DF2,from STMicroelectronics,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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