NSBC123TDP6T5G
manufacturer:
onsemi
Category:
Semiconductors
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
2 NPN - Pre-Biased (Dual)
Frequency - Transition:
-
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
250mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
SOT-963
Resistor - Base (R1):
2.2kOhms
Mfr:
Onsemi
Resistor - Emitter Base (R2):
-
Current - Collector Cutoff (Max):
500nA
Power - Max:
339mW
Package / Case:
SOT-963
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 5mA, 10V
Base Product Number:
NSBC123
Introduction
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 339mW Surface Mount SOT-963
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