UMG4N-7
manufacturer:
Diodes Incorporated
Category:
Semiconductors
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
2 NPN - Pre-Biased (Dual)
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
SOT-353
Resistor - Base (R1):
10kOhms
Mfr:
Diodes Incorporated
Resistor - Emitter Base (R2):
-
Current - Collector Cutoff (Max):
-
Power - Max:
150mW
Package / Case:
5-TSSOP, SC-70-5, SOT-353
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1mA, 5V
Base Product Number:
UMG4
Introduction
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-353
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