NHUMD9X
manufacturer:
Nexperia USA Inc.
Category:
Semiconductors
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
170MHz, 150MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
Automotive, AEC-Q101
Vce Saturation (Max) @ Ib, Ic:
100mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max):
80V
Supplier Device Package:
6-TSSOP
Resistor - Base (R1):
10kOhms
Mfr:
Nexperia USA Inc.
Resistor - Emitter Base (R2):
47kOhms
Current - Collector Cutoff (Max):
100nA
Power - Max:
350mW
Package / Case:
6-TSSOP, SC-88, SOT-363
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 10mA, 5V
Base Product Number:
NHUMD9
Introduction
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 80V 100mA 170MHz, 150MHz 350mW Surface Mount 6-TSSOP
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