RN2901FE,LXHF(CT
manufacturer:
Toshiba Semiconductor and Storage
Category:
Semiconductors
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA
Product Status:
Active
Transistor Type:
2 PNP - Pre-Biased (Dual)
Frequency - Transition:
200MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Cut Tape (CT)
Digi-Reel®
Series:
Automotive, AEC-Q101
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Voltage - Collector Emitter Breakdown (Max):
50V
Supplier Device Package:
ES6
Resistor - Base (R1):
4.7kOhms
Mfr:
Toshiba Semiconductor And Storage
Resistor - Emitter Base (R2):
4.7kOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
100mW
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
30 @ 10mA, 5V
Base Product Number:
RN2901
Introduction
Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) 50V 100mA 200MHz 100mW Surface Mount ES6
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