EMF8T2R
manufacturer:
Rohm Semiconductor
Category:
Semiconductors
Specifications
Category:
Discrete Semiconductor Products
Transistors
Bipolar (BJT)
Bipolar Transistor Arrays, Pre-Biased
Current - Collector (Ic) (Max):
100mA, 500mA
Product Status:
Not For New Designs
Transistor Type:
1 NPN Pre-Biased, 1 NPN
Frequency - Transition:
250MHz, 320MHz
Mounting Type:
Surface Mount
Package:
Tape & Reel (TR)
Series:
-
Vce Saturation (Max) @ Ib, Ic:
300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Voltage - Collector Emitter Breakdown (Max):
50V, 12V
Supplier Device Package:
EMT6
Resistor - Base (R1):
47kOhms
Mfr:
Rohm Semiconductor
Resistor - Emitter Base (R2):
47kOhms
Current - Collector Cutoff (Max):
500nA
Power - Max:
150mW
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
68 @ 5mA, 5V / 270 @ 10mA, 2V
Base Product Number:
EMF8T2
Introduction
Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased, 1 NPN 50V, 12V 100mA, 500mA 250MHz, 320MHz 150mW Surface Mount EMT6
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